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dc.contributor.advisorLionel C. Kimerling.en_US
dc.contributor.authorLim, Desmond Rodneyen_US
dc.contributor.otherMassachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science.en_US
dc.date.accessioned2005-05-19T14:34:49Z
dc.date.available2005-05-19T14:34:49Z
dc.date.copyright2000en_US
dc.date.issued2000en_US
dc.identifier.urihttp://theses.mit.edu/Dienst/UI/2.0/Describe/0018.mit.etheses%2f2000-260en_US
dc.identifier.urihttp://hdl.handle.net/1721.1/16784
dc.descriptionThesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2000.en_US
dc.descriptionAlso available online at the MIT Theses Online homepage <http://thesis.mit.edu/>en_US
dc.descriptionIncludes bibliographical references (p. 199-211).en_US
dc.descriptionThis electronic version was submitted by the student author. The certified thesis is available in the Institute Archives and Special Collections.en_US
dc.description.abstractSilicon ULSI compatible, high index contrast waveguides and devices provide high density integration for optical networking and on-chip optical interconnects. Four such waveguide systems were fabricated and analyzed: crystalline silicon-on-insulator (SOI) strip, polycrystalline silicon (polySi) strip, silicon nitride strip and SPARROW waveguides. The loss of 15 dB/cm measured through an SOI waveguide was the smallest ever measured for a silicon strip waveguide and is due to improved side-wall roughness. The TM mode of a single mode polySi strip waveguide with a 1:2.5 aspect ratio exhibited, surprisingly, smaller loss than the TE mode. Further, analysis shows that high index contrast waveguides are more sensitive to polarization dependent loss in the presence of surface roughness. Single mode bends and splits in both silicon and silicon nitride were studied. 0.01 dB/turn loss has been measured for 2 micron radius silicon bends. Polarization dependent loss was also observed; the bending loss of a TM mode was, as expected, much larger than that of a TE mode. The splitting losses for two-degree Y-split was 0.15 dB/split. A 1x16 multi-mode interferometer splitter occupied an area of 480 sq-microns and exhibited loss of 3 dB. ULSI compatible waveguide structures integrated with micro-resonators have been studied. Qs of 10000 and efficiencies close to 100% were achieved in high index contrast ring resonators and Qs of 100 million were achieved in microsphere resonators. A thermal and mechanical tuning mechanism was demonstrated for micro-ring resonators.en_US
dc.description.abstract(cont.) In addition, >95% coupling efficiency between SPARROW waveguides and microspheres was achieved, the first microspheres to be coupled to integrated optics waveguides. 1x4 wavelength division multiplexing devices have been, for the first time, demonstrated in high index contrast silicon and silicon nitride strip waveguide systems. These systems have a component density of 1-million devices/sq-cm. Higher order filters made from multiple rings exhibited flat top responses and the expected steeper roll-off resonance response. Integrated modulators and switches based on waveguides and rings were also studied. Finally, the integration of the components in systems applications was analyzed. A study of the effect of polarization and loss in silicon microphotonics waveguide systems is presented.en_US
dc.description.statementofresponsibilityby Desmond Rodney Lim Chin Siong.en_US
dc.format.extent211 p.en_US
dc.format.extent2081973 bytes
dc.format.extent2081727 bytes
dc.format.mimetypeapplication/pdf
dc.format.mimetypeapplication/pdf
dc.language.isoengen_US
dc.publisherMassachusetts Institute of Technologyen_US
dc.rightsM.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.en_US
dc.rights.urihttp://theses.mit.edu/Dienst/UI/2.0/Describe/0018.mit.etheses%2f2000-260en_US
dc.rights.urihttp://dspace.mit.edu/handle/1721.1/7582
dc.subjectElectrical Engineering and Computer Science.en_US
dc.titleDevice integration for silicon microphotonic platformsen_US
dc.typeThesisen_US
dc.description.degreePh.D.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
dc.identifier.oclc49714905en_US


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