Design and fabrication of one-dimensional and two-dimensional photonic bandgap devices
Author(s)Lim, Kuo-Yi, 1969-
Leslie A. Kolodziejski.
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One-dimensional and two-dimensional photonic bandgap devices have been designed and fabricated using III-V compound semiconductors. The one-dimensional photonic bandgap devices consist of monorail and air-bridge waveguide microcavities, while the two-dimensional photonic bandgap devices consist of light-emitting devices with enhanced extraction efficiency. Fabrication techniques such as gas source molecular beam epitaxy, direct-write electron-beam lithography, reactive ion etching and thermal oxidation of AlxGa1-xAs have been employed. The III-V thermal oxide, in particular, is used as an index confinement material, as a sacrificial material for micromechanical fabrication of the air-bridge microcavity, and in the realization of a wide-bandwidth distributed Bragg reflector ...
Thesis (Ph.D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1999.Includes bibliographical references (p. 189-196).
DepartmentMassachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science
Massachusetts Institute of Technology
Electrical Engineering and Computer Science