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Experimental study of electron velocity overshoot in silicon inversion layers

dc.contributor.advisorHenry I. Smith.en_US
dc.contributor.authorHu, Hangen_US
dc.date.accessioned2005-09-26T18:35:12Z
dc.date.available2005-09-26T18:35:12Z
dc.date.copyright1994en_US
dc.date.issued1994en_US
dc.identifier.urihttp://hdl.handle.net/1721.1/28120
dc.descriptionThesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Physics, 1994.en_US
dc.descriptionIncludes bibliographical references (leaves 127-133).en_US
dc.description.statementofresponsibilityby Hang Hu.en_US
dc.format.extent133 leavesen_US
dc.format.extent6858547 bytes
dc.format.extent6876015 bytes
dc.format.mimetypeapplication/pdf
dc.format.mimetypeapplication/pdf
dc.language.isoen_US
dc.publisherMassachusetts Institute of Technologyen_US
dc.rightsM.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.en_US
dc.rights.urihttp://dspace.mit.edu/handle/1721.1/7582
dc.subjectPhysicsen_US
dc.titleExperimental study of electron velocity overshoot in silicon inversion layersen_US
dc.typeThesisen_US
dc.description.degreePh.D.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Physics
dc.identifier.oclc32044826en_US


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