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dc.contributor.advisorKaren K. Gleason.en_US
dc.contributor.authorPryce Lewis, Hilton G. (Hilton Gavin), 1973-en_US
dc.contributor.otherMassachusetts Institute of Technology. Dept. of Chemical Engineering.en_US
dc.date.accessioned2005-09-26T19:18:06Z
dc.date.available2005-09-26T19:18:06Z
dc.date.copyright2001en_US
dc.date.issued2001en_US
dc.identifier.urihttp://hdl.handle.net/1721.1/28237
dc.descriptionThesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Chemical Engineering, 2001.en_US
dc.descriptionIncludes bibliographical references.en_US
dc.description.abstractOrganosilicon thin films deposited by pulsed plasma-enhanced chemical vapor deposition (PPECVD) and hot-filament chemical vapor deposition (HFCVD) were investigated as potential biopassivation coatings for neural probes. It was found that organosilicon films from identical precursors differ in structure according to the method of deposition. For films produced from the cyclic siloxane precursor, hexamethylcyclotrisiloxane, pulsed plasma excitation reduced crosslink density over continuous excitation and produced flexible films resistant to prolonged saline soak testing. Deposition via a thermal process, HFCVD, allowed films of novel organosilicon structure to be formed from both hexamethylcyclotrisiloxane and its eight-membered analog, octamethylcyclotetrasiloxane. Characterization of these films was accomplished, and the effect of filament temperature on the chemical structure was elucidated. Silicon-silicon bonding and the retention of ring structures from the precursor was observed in HFCVD organosilicon films using Micro-Raman spectroscopy. A direct dielectric patterning process was proposed for semiconductor manufacturing. In this process, a dielectric material is patterned directly and developed without the need for a sacrificial photoresist layer. HFCVD fluorocarbon films are under consideration as low-dielectric constant interlayer dielectrics, and direct patterning of these materials was demonstrated using e-beam irradiation and supercritical CO2 development. The use of a gas-phase initiator species for HFCVD of fluorocarbon thin films was also demonstrated. Initiation enhanced deposition rates significantly and provided a means of selectively end-capping polymer chains present in the film structure.en_US
dc.description.statementofresponsibilityby Hilton G. Pryce Lewis.en_US
dc.format.extent127 leavesen_US
dc.format.extent6851271 bytes
dc.format.extent6867815 bytes
dc.format.mimetypeapplication/pdf
dc.format.mimetypeapplication/pdf
dc.language.isoen_US
dc.publisherMassachusetts Institute of Technologyen_US
dc.rightsM.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.en_US
dc.rights.urihttp://dspace.mit.edu/handle/1721.1/7582
dc.subjectChemical Engineering.en_US
dc.titleChemical vapor deposition thin films as biopassivation coatings and directly patternable dielectricsen_US
dc.typeThesisen_US
dc.description.degreePh.D.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Dept. of Chemical Engineering.en_US
dc.identifier.oclc49560096en_US


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