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dc.contributor.advisorDimitri A. Antoniadis.en_US
dc.contributor.authorNayfeh, Osama Munir, 1980-en_US
dc.contributor.otherMassachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science.en_US
dc.date.accessioned2005-09-27T16:57:03Z
dc.date.available2005-09-27T16:57:03Z
dc.date.issued2004en_US
dc.identifier.urihttp://hdl.handle.net/1721.1/28549
dc.descriptionThesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, June 2004.en_US
dc.description"May 2004."en_US
dc.descriptionIncludes bibliographical references (leaves 38-39).en_US
dc.description.abstractSubsequent to accurate 2D inverse modeling in the regime sensitive to electrostatics of industrial sub-50 nm NMOSFETs, a 2D full-band Monte Carlo device simulator was calibrated in the regime sensitive to transport parameters. The relationship between electron mobility and high-electric-field velocity at the source-channel potential energy barrier was investigated. The results show a strong correlation, as was demonstrated previously experimentally. Moreover, further proof is provided that the velocity at which carriers are injected from the source region in modem NMOSFET's is only about half of the limiting thermal velocity.en_US
dc.description.statementofresponsibilityby Osama Munir Nayfeh.en_US
dc.format.extent39 leavesen_US
dc.format.extent1514040 bytes
dc.format.extent1516230 bytes
dc.format.mimetypeapplication/pdf
dc.format.mimetypeapplication/pdf
dc.language.isoen_US
dc.publisherMassachusetts Institute of Technologyen_US
dc.rightsM.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.en_US
dc.rights.urihttp://dspace.mit.edu/handle/1721.1/7582
dc.subjectElectrical Engineering and Computer Science.en_US
dc.titleOn the relationship between carrier mobility and velocity in sub-50 mm MOSFETs via calibrated Monte Carlo simulationen_US
dc.typeThesisen_US
dc.description.degreeS.M.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science.en_US
dc.identifier.oclc57402101en_US


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