Inorganic semiconductors for printed transistors

Abstract

CdSe nanoparticles have been solution deposited and thermally processed into thin film transistor channels, demonstrating for the first time that an inorganic semiconductor can be printed. A peak field effect mobility of 2.05 cm2V-1s-1 1 was observed for a device processed at 350 °C. The highest ON/OFF ratio, found in a different device, was 8.6x10 3 for a 10 to -10 V gate sweep at a drain-source voltage of -5 V. For the same voltage sweep a mobility of 0.26 cm 2V- s- and an ON/OFF ratio of 1.3 x 103 was observed in a single device. Processing temperatures as low as 250 °C were found to produce semiconducting films that displayed a field effect. A new metathetic synthesis was developed to produce pyridine-capped CdSe nanoparticles at sizes below 20 A.