Show simple item record

dc.contributor.authorQuang, Le Hong
dc.contributor.authorChua, Soo-Jin
dc.contributor.authorFitzgerald, Eugene A.
dc.date.accessioned2005-12-12T17:28:15Z
dc.date.available2005-12-12T17:28:15Z
dc.date.issued2006-01
dc.identifier.urihttp://hdl.handle.net/1721.1/29820
dc.description.abstractWe report on the characteristics of a ZnO based metal insulator semiconductor (MIS) diode comprised of a heterostructure of n-ZnO nanorods/n-GaN. The MIS structure consisted of unintentional - doped n type ZnO nanorods grown on n-GaN sample using hydrothermal synthesis at low temperature (100°). The ZnO nanorod layer was vertically grown from the GaN sample, having the diameter 100nm and length 2µm. Then, an insulator layer for electrical isolation was deposited on the top of ZnO nanorod layer by using spin coating method. A metal layer (gold) was finally deposited on the top. The I-V dependences show a rectifying diode like behavior with a leakage current of 2.10⁻⁵ A and a threshold voltage of about 3V. Depend on the thickness of the insulator, the I-V dependences of the n-ZnO/n-GaN heterostructure was varied from rectifying behavior to Ohmic and nearly linear.en
dc.description.sponsorshipSingapore-MIT Alliance (SMA)en
dc.format.extent621386 bytes
dc.format.mimetypeapplication/pdf
dc.language.isoenen
dc.relation.ispartofseriesAdvanced Materials for Micro- and Nano-Systems (AMMNS)en
dc.subjectGallium Nitrideen
dc.subjectMetal Insulator Semiconductor structureen
dc.subjectNanostructureen
dc.subjectZinc compoundsen
dc.titleFabrication and I-V Characterization of ZnO Nanorod Based Metal-Insulator-Semiconductor Junctionen
dc.typeArticleen


Files in this item

Thumbnail

This item appears in the following Collection(s)

Show simple item record