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dc.contributor.advisorAkintunde Ibitayo (Tayo) Akinwande.en_US
dc.contributor.authorChen, Liang-Yu, 1979-en_US
dc.contributor.otherMassachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science.en_US
dc.date.accessioned2006-03-24T18:19:27Z
dc.date.available2006-03-24T18:19:27Z
dc.date.copyright2004en_US
dc.date.issued2004en_US
dc.identifier.urihttp://hdl.handle.net/1721.1/30099
dc.descriptionThesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2004.en_US
dc.descriptionIncludes bibliographical references (p. 108-114).en_US
dc.description.abstractThere is a need for massively parallel, individually addressed and focused electron sources for applications such as flat panel displays, mass storage and multi-beam electron beam lithography. This project fabricates and characterizes double-gated field emission devices with high aspect ratio. One of the gates extracts the electrons while the second gate focuses the electrons into small spots. High aspect ratio silicon field emitters were defined by reactive ion etching of silicon followed by multiple depositions of polycrystalline oxide insulators and silicon gates. The layers were defined by a combination of lithography, chemical mechanical polishing and micromachining. We obtained devices with gate and focus apertures of 0.4[mu]m and 1.2[mu]m diameter. The anode current has very little dependence on the focus voltage and the ratio of the focus field factor to the gate field factor βF / βG is 0.015. Scanning electron micrographs of the devices, numerical simulation and spot size measurements on a phosphor screen confirmed these results. An e-beam resist, PMMA, was successfully exposed using the FEA device as an electron source.en_US
dc.description.statementofresponsibilityby Liang-Yu Chen.en_US
dc.format.extent114 p.en_US
dc.format.extent3767599 bytes
dc.format.extent3767407 bytes
dc.format.mimetypeapplication/pdf
dc.format.mimetypeapplication/pdf
dc.language.isoengen_US
dc.publisherMassachusetts Institute of Technologyen_US
dc.rightsM.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.en_US
dc.rights.urihttp://dspace.mit.edu/handle/1721.1/7582
dc.subjectElectrical Engineering and Computer Science.en_US
dc.titleDouble-gated field emission arraysen_US
dc.typeThesisen_US
dc.description.degreeS.M.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
dc.identifier.oclc55693330en_US


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