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dc.contributor.advisorJoseph Jacobson.en_US
dc.contributor.authorDelHagen, William Sen_US
dc.contributor.otherMassachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science.en_US
dc.date.accessioned2006-02-02T18:55:31Z
dc.date.available2006-02-02T18:55:31Z
dc.date.copyright2004en_US
dc.date.issued2004en_US
dc.identifier.urihttp://hdl.handle.net/1721.1/31174
dc.descriptionThesis (M. Eng.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2004.en_US
dc.descriptionIncludes bibliographical references (p. 73-74).en_US
dc.description.abstractThis thesis studies the morphological and electrical properties of copper nanocluster devices generated by DC magnetron sputtering and annealed at temperatures up to 1100 C. At each annealing step, the resistivity of the cluster device was measured and electron micrographs were taken of the cluster depositions. Nanoclusters have been studied for decades because of the unique properties they display that are somewhere between bulk materials and atomic behavior. Recently, techniques have been explored to exploit the depressed melting point effect that small clusters exhibit to fabricate integrated circuit components. These techniques have only been attempted with colloidal solutions of passivated nanoclusters. The purpose of this thesis is to undertake an investigation of the melting point of clusters generated from a sputter source without passivation. Differing from passivated clusters, resistivity of copper cluster films was found to increase with annealing temperatures until about 900 degrees C but drop to one order of magnitude greater than bulk resistivity after annealing at 1100 C.en_US
dc.description.statementofresponsibilityby William S. DelHagen.en_US
dc.format.extent74 p.en_US
dc.format.extent4572935 bytes
dc.format.extent4580636 bytes
dc.format.mimetypeapplication/pdf
dc.format.mimetypeapplication/pdf
dc.language.isoengen_US
dc.publisherMassachusetts Institute of Technologyen_US
dc.rightsM.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.en_US
dc.rights.urihttp://dspace.mit.edu/handle/1721.1/7582
dc.subjectElectrical Engineering and Computer Science.en_US
dc.titleFabrication of metallic nanostructures from sputtered nanocluster precursorsen_US
dc.typeThesisen_US
dc.description.degreeM.Eng.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science.en_US
dc.identifier.oclc61240809en_US


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