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dc.contributor.advisorDoug White and Joel Dawson.en_US
dc.contributor.authorNoonan, James (James Keating)en_US
dc.contributor.otherMassachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science.en_US
dc.date.accessioned2006-03-28T19:51:40Z
dc.date.available2006-03-28T19:51:40Z
dc.date.copyright2005en_US
dc.date.issued2005en_US
dc.identifier.urihttp://hdl.handle.net/1721.1/32103
dc.descriptionThesis (M. Eng.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2005.en_US
dc.descriptionThis electronic version was submitted by the student author. The certified thesis is available in the Institute Archives and Special Collections.en_US
dc.descriptionIncludes bibliographical references (p. 91-92).en_US
dc.description.abstractIn this thesis, I addressed issues arising in the design of a high efficiency RF power amplifier for the Draper Laboratory multi-chip module (MCM) process. A design for a 2.3 GHz PCB amplifier using an enhancement-mode pHEMT device that achieves 68.9% PAE at 30 dBm output power is presented. Analysis of heat management, die connection parasitics, and transmission line structures in the context of the MCM process is performed to show that a similar design could realistically be adapted to the MCM process with possible performance enhancement.en_US
dc.description.statementofresponsibilityby James Noonan.en_US
dc.format.extent92 p.en_US
dc.format.extent539320 bytes
dc.format.extent535222 bytes
dc.format.mimetypeapplication/pdf
dc.format.mimetypeapplication/pdf
dc.language.isoengen_US
dc.publisherMassachusetts Institute of Technologyen_US
dc.rightsM.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.en_US
dc.rights.urihttp://dspace.mit.edu/handle/1721.1/7582
dc.subjectElectrical Engineering and Computer Science.en_US
dc.titleThe design of a high efficiency RF power amplifier for an MCM processen_US
dc.typeThesisen_US
dc.description.degreeM.Eng.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
dc.identifier.oclc62324434en_US


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