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dc.contributor.advisorMarc A. Kastner.en_US
dc.contributor.authorGranger, Ghislainen_US
dc.contributor.otherMassachusetts Institute of Technology. Dept. of Physics.en_US
dc.date.accessioned2008-03-26T20:32:08Z
dc.date.available2008-03-26T20:32:08Z
dc.date.copyright2005en_US
dc.date.issued2005en_US
dc.identifier.urihttp://dspace.mit.edu/handle/1721.1/32305en_US
dc.identifier.urihttp://hdl.handle.net/1721.1/32305
dc.descriptionThesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Physics, 2005.en_US
dc.descriptionIncludes bibliographical references (p. 169-175).en_US
dc.description.abstractBasic electron transport phenomena observed in single-electron transistors (SETs) are introduced, such as Coulomb-blockade diamonds, inelastic cotunneling thresholds, the spin-1/2 Kondo effect, and Fano interference. With a magnetic field parallel to the motion of the electrons, single-particle energy levels undergo Zeeman splitting according to their spin. The g-factor describing this splitting is extracted in the spin-flip inelastic cotunneling regime. The Kondo splitting is linear and slightly greater than the Zeeman splitting. At zero magnetic field, the spin triplet excited state energy and its dependence on gate voltage are measured via sharp Kondo peaks superimposed on inelastic cotunneling thresholds. Singlet-triplet transitions and an avoided crossing are analyzed with a simple two-level model, which provides information about the exchange energy and the orbital mixing. With four electrons on the quantum dot, the spin triplet state has two characteristic energy scales, consistent with a two-stage Kondo effect description. The low energy scale extracted from a nonequilibrium measurement is larger than those extracted in equilibrium.en_US
dc.description.statementofresponsibilityby Ghislain Granger.en_US
dc.format.extent175 p.en_US
dc.language.isoengen_US
dc.publisherMassachusetts Institute of Technologyen_US
dc.rightsM.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.en_US
dc.rights.urihttp://dspace.mit.edu/handle/1721.1/32305en_US
dc.rights.urihttp://dspace.mit.edu/handle/1721.1/7582en_US
dc.subjectPhysics.en_US
dc.titleSpin effects in single-electron transistorsen_US
dc.typeThesisen_US
dc.description.degreePh.D.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Physics
dc.identifier.oclc61354886en_US


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