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Pulse-field actuation of collinear magnetic single crystals

Author(s)
Jenkins, Catherine A. (Catherine Ann), 1981-
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Massachusetts Institute of Technology. Dept. of Materials Science and Engineering.
Advisor
Samuel M. Allen and Robert C. O'Handley.
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M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission. http://dspace.mit.edu/handle/1721.1/7582
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Abstract
Ferromagnetic shape memory alloys (FSMAs) are a class of alloys that exhibits the shape memory effect, as in the alloy nickel-titanium, sometimes known as Nitinol. In FSMAs, though, the shape changes are not brought on just by changes in temperature or mechanical stresses, but can also be driven by the application of a relatively small magnetic field. The large strains exhibited by such materials are a result of the coexistence of several features, including a thermoelastic martensitic transition, and a ferromagnetic martensite (non-equilibrium, low-temperature) phase. The magnetocrystalline anisotropy must also be large, as seen in similar alloys such as iron-palladium (Fe₇₀Pd₃₀) [1]. Nickel-manganese-gallium is an FSMA that has shown up to 10% strain in certain orientations as an effect of unconstrained magnetic actuation [4]. To achieve cyclic actuation in FSMAs, the field-induced extension has conventionally been reversed by a compressive mechanical stress from a spring or field orthogonal to the actuating field. The use of a second FSMA crystal to provide the reset force was unreported. Collinear single crystals are shown here to be able to induce a 2.8% reset strain against one another when subjected alternately to individual pulsed magnetic fields in a custom designed and constructed apparatus. A setup of this type could be used in a bistable microswitch, linear motion actuator, or shutter controller where a low actuation stress is sufficient or the electrical contacts required to activate a piezoelectric device are undesirable.
Description
Thesis (S.B.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 2004.
 
Includes bibliographical references (p. 33-34).
 
Date issued
2004
URI
http://hdl.handle.net/1721.1/32717
Department
Massachusetts Institute of Technology. Department of Materials Science and Engineering
Publisher
Massachusetts Institute of Technology
Keywords
Materials Science and Engineering.

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