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dc.contributor.advisorMarc Kastner.en_US
dc.contributor.authorSchriver, Maria Cen_US
dc.contributor.otherMassachusetts Institute of Technology. Dept. of Physics.en_US
dc.date.accessioned2006-05-15T20:38:43Z
dc.date.available2006-05-15T20:38:43Z
dc.date.copyright2005en_US
dc.date.issued2005en_US
dc.identifier.urihttp://hdl.handle.net/1721.1/32911
dc.descriptionThesis (S.B.)--Massachusetts Institute of Technology, Dept. of Physics, 2005.en_US
dc.descriptionIncludes bibliographical references (p. 49-50).en_US
dc.description.abstractI have investigated electrical properties of arrays of lead selenide (PbSe) nanocrystals (NC's) of approximately 6nm diameter. The films become substantially more conducting when annealed at 400K, although no chemical changes of the capping layer occur at this low temperature. There is no evidence based on TEM images of annealed and unannealed films that the interparticle spacing changes at 400K. The dependence of the conductance on the voltage applied to a gate separated from the sample by 350nm of SiO2 was also measured. At 77K and 150K, a U-shaped curve is observed with a minimum in conductance near zero gate voltage, indicating that both electrons and holes are injected. At 294K, the conductance falls monotonically with increasing gate voltage, indicating injection of holes only. I calculate the electron and hole mobilities, [mu]e and [mu]h at 77K and 150K and find effective mobilities 10 orders of magnitude smaller than those of bulk PbSe at 77K.en_US
dc.description.statementofresponsibilityby Maria C. Schriver.en_US
dc.format.extent50 p.en_US
dc.format.extent1960789 bytes
dc.format.extent1961491 bytes
dc.format.mimetypeapplication/pdf
dc.format.mimetypeapplication/pdf
dc.language.isoengen_US
dc.publisherMassachusetts Institute of Technologyen_US
dc.rightsM.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.en_US
dc.rights.urihttp://dspace.mit.edu/handle/1721.1/7582
dc.subjectPhysics.en_US
dc.titleElectron transport in lead selenide nanocrystal arraysen_US
dc.title.alternativeElectron transport in PbSe nanocrystal arraysen_US
dc.typeThesisen_US
dc.description.degreeS.B.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Dept. of Physics.en_US
dc.identifier.oclc62628140en_US


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