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dc.contributor.advisorLeslie A. Kolodziejski.en_US
dc.contributor.authorKangude, Yaminien_US
dc.contributor.otherMassachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science.en_US
dc.date.accessioned2006-07-13T15:20:45Z
dc.date.available2006-07-13T15:20:45Z
dc.date.copyright2005en_US
dc.date.issued2005en_US
dc.identifier.urihttp://hdl.handle.net/1721.1/33395
dc.descriptionThesis (S.M.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering; and, (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2005.en_US
dc.descriptionIncludes bibliographical references (leaves 57-58).en_US
dc.description.abstractIn this thesis, two red emitting photonic devices are presented using the InGaP/InGaAlP material system. InGaP/InGaAlP material system provides large flexibility in the band gap energy while being lattice matched to GaAs substrate. The devices consist of a quantum well active region and a distributed bragg reflector at the bottom to reduce loss of emitted light into the substrate. The first device emits at a wavelength of 650 nm and is intended to create a photonic crystal light emitting diode (PCLED). PCLEDs have been demonstrated to have higher efficiency compared to devices without the photonic crystal. The second device emits at 690 nm and is intended for integrating with an organic semiconductor to form a hybrid organic-inorganic emitter. The devices were grown using gas source molecular beam epitaxy (GSMBE) and then processed to form the final device. .en_US
dc.description.statementofresponsibilityby Yamini Kangude.en_US
dc.format.extent58 leavesen_US
dc.format.extent2677010 bytes
dc.format.extent2679333 bytes
dc.format.mimetypeapplication/pdf
dc.format.mimetypeapplication/pdf
dc.language.isoengen_US
dc.publisherMassachusetts Institute of Technologyen_US
dc.rightsM.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.en_US
dc.rights.urihttp://dspace.mit.edu/handle/1721.1/7582
dc.subjectMaterials Science and Engineering.en_US
dc.subjectElectrical Engineering and Computer Science.en_US
dc.titleRed emitting photonic devices using InGaP/InGaAlP material systemen_US
dc.typeThesisen_US
dc.description.degreeS.M.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Dept. of Materials Science and Engineering.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science.en_US
dc.identifier.oclc62628423en_US


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