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dc.contributor.advisorJongyoon Han.en_US
dc.contributor.authorLe Coguic, Arnauden_US
dc.contributor.otherMassachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science.en_US
dc.date.accessioned2006-08-25T18:50:53Z
dc.date.available2006-08-25T18:50:53Z
dc.date.copyright2005en_US
dc.date.issued2005en_US
dc.identifier.urihttp://hdl.handle.net/1721.1/33850
dc.descriptionThesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2005.en_US
dc.descriptionIncludes bibliographical references (p. 101-106).en_US
dc.description.abstractThe effect of an external gate potential control on the nanofluidic nanochannels was experimentally investigated in this work. Like in the field effect transistors (FET) in microelectronics, molecular transport in micro/nanofluidic channels can be controlled by applying external potentials on the wall of the fluidic channel. In nanofluidic devices, this type of control is expected to be more efficient due to its high surface to charge ratio. We focused on a nanofluidic concentrator to study this effect. We could increase or decrease the concentration rate of the device by increasing or decreasing the surface charge potential (-potential) on the walls of the nanochannels. An increased -potential enhances the electrokinetic effects caused by electrical double layer. Which in turn accelerates the creation of a charge polarization region and improves the concentration capabilities of the device. We also have demonstrated concentration polarization effect, caused by pressure-driven flow in the nanofluidic channel, and showed that this phenomena can also be modulated by changing the gate potential of the nanofluidic devices. The gate potential effect opens the door for closed-loop real-time control of nanofluidic concentrators.en_US
dc.description.statementofresponsibilityby Arnaud Le Coguic.en_US
dc.format.extent106 p.en_US
dc.format.extent3495341 bytes
dc.format.extent3499763 bytes
dc.format.mimetypeapplication/pdf
dc.format.mimetypeapplication/pdf
dc.language.isoengen_US
dc.publisherMassachusetts Institute of Technologyen_US
dc.rightsM.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.en_US
dc.rights.urihttp://dspace.mit.edu/handle/1721.1/7582
dc.subjectElectrical Engineering and Computer Science.en_US
dc.titleGate potential control of nanofluidic devicesen_US
dc.typeThesisen_US
dc.description.degreeS.M.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science.en_US
dc.identifier.oclc66145126en_US


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