Characterization of organic field effect transistors for OLED displays
Author(s)
Ryu, Kyungbum![Thumbnail](/bitstream/handle/1721.1/33853/66271849-MIT.pdf.jpg?sequence=5&isAllowed=y)
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Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science.
Advisor
Charles G. Sodini and Vladimir BuloviÄ.
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This thesis explores the characterization of OFETs that will aid the circuit design of OLED pixel drivers. The contact resistance, flat band voltage, and mobility are extracted from top contact and bottom contact transistors with current-voltage (I-V) and low frequency capacitance-voltage (C-V) measurements. Extraction of contact resistance is found to be crucial in characterization of bottom-contact transistors as it obscures mobility extraction. An unambiguous method of extracting flat band voltage is explored and mobility is extracted with minimal assumptions by separation of charge and mobility from C-V measurements. Mobility is found to increase with gate voltage differing significantly from mobility dependence in crystal silicon MOSFETs.
Description
Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2005. Includes bibliographical references (p. 49-51).
Date issued
2005Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer SciencePublisher
Massachusetts Institute of Technology
Keywords
Electrical Engineering and Computer Science.