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MBE-grown long wavelength InGaAlAs/InP laser diodes

dc.contributor.advisorClifton G. Fonstad.en_US
dc.contributor.authorChoi, Woo-Youngen_US
dc.date.accessioned2006-09-28T14:56:30Z
dc.date.available2006-09-28T14:56:30Z
dc.date.copyright1994en_US
dc.date.issued1994en_US
dc.identifier.urihttp://hdl.handle.net/1721.1/34061
dc.descriptionThesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1994.en_US
dc.descriptionIncludes bibliographical references (leaves 107-116).en_US
dc.description.statementofresponsibilityby Woo-Young Choi.en_US
dc.format.extent116 leavesen_US
dc.format.extent6914855 bytes
dc.format.extent7180734 bytes
dc.format.mimetypeapplication/pdf
dc.format.mimetypeapplication/pdf
dc.language.isoengen_US
dc.publisherMassachusetts Institute of Technologyen_US
dc.rightsM.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.en_US
dc.rights.urihttp://dspace.mit.edu/handle/1721.1/7582
dc.subjectElectrical Engineering and Computer Scienceen_US
dc.titleMBE-grown long wavelength InGaAlAs/InP laser diodesen_US
dc.typeThesisen_US
dc.description.degreePh.D.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
dc.identifier.oclc31262272en_US


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