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dc.contributor.advisorVladimir Bulović.en_US
dc.contributor.authorMei, Jun, S.B. Massachusetts Institute of Technologyen_US
dc.contributor.otherMassachusetts Institute of Technology. Dept. of Materials Science and Engineering.en_US
dc.date.accessioned2006-12-18T20:00:43Z
dc.date.available2006-12-18T20:00:43Z
dc.date.copyright2006en_US
dc.date.issued2006en_US
dc.identifier.urihttp://hdl.handle.net/1721.1/35059
dc.descriptionThesis (S.B.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 2006.en_US
dc.descriptionIncludes bibliographical references (p. 83-86).en_US
dc.description.abstractOne fundamental challenge in designing organic light-emitting diodes is luminescence quenching near an electrode. In this work, we investigate the underlying mechanism behind luminescence quenching by measuring the reduction in Alq3 photoluminescence due to SnO02. Using an analytical model and a Monte Carlo simulation for exciton dynamics in amorphous organic solids, we find that the exciton diffusion length in bulk Alq3 is in the range of 70--80 A. We also find that for SnO2 films deposited without oxygen in the sputtering ambient, resonant energy transfer from Alq3 to SnO2 is the dominant quenching mechanism. By varying the oxygen content in the Ar/C)2 sputtering gas mixture, we find that the energy transfer distance decreases from 10--25 A for 0% 02 to less than 2 A for 10% 02. Our experimental results suggest that because excess oxygen reduces oxygen vacancies and defect electronic states in SnO2, it leads to a smaller spectral overlap between the emission of Alq3 and the absorption of SnO2, thereby shortening the energy transfer distance and reducing the quenching capability of SnO2.en_US
dc.description.statementofresponsibilityby Jun Mei.en_US
dc.format.extent86 p.en_US
dc.format.extent3744275 bytes
dc.format.extent3748255 bytes
dc.format.mimetypeapplication/pdf
dc.format.mimetypeapplication/pdf
dc.language.isoengen_US
dc.publisherMassachusetts Institute of Technologyen_US
dc.rightsM.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.en_US
dc.rights.urihttp://dspace.mit.edu/handle/1721.1/7582
dc.subjectMaterials Science and Engineering.en_US
dc.titlePhotoluminescence quenching of organic thin films by transparent conductive oxidesen_US
dc.typeThesisen_US
dc.description.degreeS.B.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Dept. of Materials Science and Engineering.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Materials Science and Engineering
dc.identifier.oclc71227460en_US


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