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dc.contributor.advisorAngela Belcher.en_US
dc.contributor.authorGiam, Louise Ren_US
dc.contributor.otherMassachusetts Institute of Technology. Dept. of Materials Science and Engineering.en_US
dc.date.accessioned2006-12-18T20:02:04Z
dc.date.available2006-12-18T20:02:04Z
dc.date.copyright2006en_US
dc.date.issued2006en_US
dc.identifier.urihttp://hdl.handle.net/1721.1/35070
dc.descriptionThesis (S.B.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 2006.en_US
dc.descriptionIncludes bibliographical references (p. 19).en_US
dc.description.statementofresponsibilityby Louise R. Giam.en_US
dc.format.extent19 p.en_US
dc.format.extent1014053 bytes
dc.format.extent1011815 bytes
dc.format.mimetypeapplication/pdf
dc.format.mimetypeapplication/pdf
dc.language.isoengen_US
dc.publisherMassachusetts Institute of Technologyen_US
dc.rightsM.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.en_US
dc.rights.urihttp://dspace.mit.edu/handle/1721.1/7582
dc.subjectMaterials Science and Engineering.en_US
dc.titleGallium Nitride (GaN) quantum dot layer formationen_US
dc.title.alternativeGaN quantum dot layer formationen_US
dc.title.alternativeGallium Nitride quantum dot layer formationen_US
dc.typeThesisen_US
dc.description.degreeS.B.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Materials Science and Engineering
dc.identifier.oclc71230827en_US


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