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dc.contributor.advisorVladimir Bulović.en_US
dc.contributor.authorBradley, Michael Scotten_US
dc.contributor.otherMassachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science.en_US
dc.date.accessioned2007-03-09T18:54:49Z
dc.date.available2007-03-09T18:54:49Z
dc.date.copyright2006en_US
dc.date.issued2006en_US
dc.identifier.urihttp://hdl.handle.net/1721.1/36394
dc.descriptionThesis (M. Eng.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2006.en_US
dc.descriptionThis electronic version was submitted by the student author. The certified thesis is available in the Institute Archives and Special Collections.en_US
dc.descriptionIncludes bibliographical references (p. 52-53).en_US
dc.description.abstractHighly absorptive thin films serve as the active layer of a new class of photonic devices based on the strong coupling of light and matter. In order to develop these devices into a new field of integrated photonics, methods for analysis, patterning, and deposition of the active layer are necessary. This thesis develops these methods and applies them to thin films of J-aggregates grown in a layer-by-layer (LBL) process, which have been shown to have remarkable optical and morphological properties and have recently enabled the demonstration of strong coupling between light and matter in an electroluminescent device at room temperature. J-aggregate thin films are analyzed using Kramers-Kronig regression to determine their complex index of refraction, an important parameter involved in photonic device design. Additionally, a soft lithography method is demonstrated for patterning and deposition of LBL J-aggregate thin films. Together, these methods can be used to further enable integrated photonics based on the strong coupling of light and matter.en_US
dc.description.statementofresponsibilityby Michael Scott Bradley.en_US
dc.format.extent53 p.en_US
dc.language.isoengen_US
dc.publisherMassachusetts Institute of Technologyen_US
dc.rightsM.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.en_US
dc.rights.urihttp://dspace.mit.edu/handle/1721.1/7582
dc.subjectElectrical Engineering and Computer Science.en_US
dc.titleHighly absorptive thin films for integrated photonic devicesen_US
dc.typeThesisen_US
dc.description.degreeM.Eng.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
dc.identifier.oclc79629159en_US


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