Browsing Singapore-MIT Alliance (SMA) by Subject "gallium nitride"
Now showing items 1-5 of 5
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Characterization of ZnO Nanorods Grown on GaN Using Aqueous Solution Method
(2005-01)Uniformly distributed ZnO nanorods with diameter 70-100 nm and 1-2μm long have been successfully grown at low temperatures on GaN by using the inexpensive aqueous solution method. The formation of the ZnO nanorods and the ... -
Growth of ZnO Nanorods on GaN Using Aqueous Solution Method
(2005-01)Uniformly distributed ZnO nanorods with diameter 80-120 nm and 1-2µm long have been successfully grown at low temperatures on GaN by using the inexpensive aqueous solution method. The formation of the ZnO nanorods and ... -
High Density Single Crystalline GaN Nanodot Arrays Fabricated Using Template-Assisted Selective Growth
(2005-01)High density, uniform GaN nanodot arrays with controllable size have been synthesized by using template-assisted selective growth. The GaN nanodots with average diameter 40nm, 80nm and 120nm were selectively grown by ... -
High Indium Concentration InGaN/GaN Grown on Sapphire Substrate by MOCVD
(2005-01)The InGaN system provides the opportunity to fabricate light emitting devices over the whole visible and ultraviolet spectrum due to band-gap energies E[subscript g] varying between 3.42 eV for GaN and 1.89 eV for InN. ... -
High Optical Quality Nanoporous GaN Prepared by Photoelectrochemical Etching
(2005-01)Nanoporous GaN films are prepared by UV assisted electrochemical etching using HF solution as an electrolyte. To assess the optical quality and morphology of these nanoporous films, micro-photoluminescence (PL), micro-Raman ...
