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    • Effect of Oxygen on Ni-Silicided FUSI Metal Gate 

      Yu, H.P.; Pey, Kin Leong; Choi, Wee Kiong; Chi, D.Z.; Fitzgerald, Eugene A.; e.a. (2006-01)
      Continual evolution of the CMOS technology requires thinner gate dielectric to maintain high performance. However, when moving into the sub-65 nm CMOS generation, the traditional poly-Si gate approach cannot effectively ...