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    • The interfacial reaction of Ni on (100) Si₁â‚‹xGex (x=0, 0.25) and (111) Ge 

      Jin, Lijuan; Pey, Kin Leong; Choi, Wee Kiong; Fitzgerald, Eugene A.; Antoniadis, Dimitri A.; e.a. (2003-01)
      The interfacial reaction of Ni with Si, Si₀.₇₅Ge₀.₂₅, and Ge at 400°C has been investigated. A uniform epitaxial NiSi film was obtained at 400°C for Ni-Silicidation on Si using rapid thermal annealing method. Similarly, ...