Browsing Singapore-MIT Alliance (SMA) by Subject "layer transfer"
Now showing items 1-1 of 1
-
Strained Silicon on Silicon by Wafer Bonding and Layer Transfer from Relaxed SiGe Buffer
(2005-01)We report the creation of strained silicon on silicon (SSOS) substrate technology. The method uses a relaxed SiGe buffer as a template for inducing tensile strain in a Si layer, which is then bonded to another Si handle ...