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First-Principles Study of Point Defects in LaAlO₃
In this study, the native point defects including oxygen vacancy and interstitial, metal (La, Al) vacancy and interstitial, and metal antisite in perovskite LAO are studied. Defect formation energies are studied as a ...
Study of Stress Evolution of Germanium Nanocrystals Embedded in Silicon Oxide Matrix
Germanium (Ge) nanocrystals had been synthesized by annealing co-sputtered SiO₂-Ge in N₂ and/or forming gas (90% N₂ + 10% H₂) at temperatures ranging from 700 to 1000°C from 15 to 60 min. It was concluded that the annealing ...
Workfunction Tuning of n-Channel MOSFETs Using Interfacial Yttrium Layer in Fully Silicided Nickel Gate
Continual scaling of the CMOS technology requires thinner gate dielectric to maintain high performance. However, when moving into the sub-45 nm CMOS generation, the traditional poly-Si gate approach cannot effectively ...