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SiGeC Near Infrared Photodetectors
(2002-01)
A near infrared waveguide photodetector in Si-based ternary Si₁âxâyGexCy alloy was demonstrated for 0.85~1.06 µm wavelength fiber-optic interconnection system applications. Two sets of detectors with active absorption ...
Graded InGaN Buffers for Strain Relaxation in GaN/InGaN Epliayers Grown on Sapphire
(2002-01)
Graded InGaN buffers are employed to relax the strain arising from the lattice and thermal mismatches between GaN/InGaN epilayers grown on sapphire. The formation of V-pits in linearly graded InGaN/GaN bulk epilayers is ...