Now showing items 1-6 of 6
Dependence of nanocrystal formation and charge storage/retention performance of a tri-layer memory structure on germanium concentration and tunnel oxide thickness
The effect of germanium (Ge) concentration and the rapid thermal oxide (RTO) layer thickness on the nanocrystal formation and charge storage/retention capability of a trilayer metal-insulator-semiconductor device was ...
Micro Raman Spectroscopy of Annealed Erbium Implanted GaN
Wurtzite GaN epilayers grown by metal organic chemical vapor deposition on sapphire substrates were subsequently ion implanted with Er to a dose of 5×10¹⁵ cm⁻². The implanted samples were annealed in nitrogen atmosphere ...
Effect of Pt on agglomeration and Ge out-diffusion in Ni(Pt) germanosilicide
The effect of Ni and Ni(Pt) alloy with ~5 and 10 at. % Pt on the agglomeration and Ge out-diffusion in Nickel germanosilicide formed on Si₀.₇₅Ge₀.₂₅(100) has been studied. A ...
Charge storage in nanocrystal systems: Role of defects?
Wet thermal oxidations of polycrystalline Si₀.₅₄Ge₀.₄₆ films at 600°C for 30 and 50 min were carried out. A stable mixed oxide was obtained for films that were oxidized for 50 min. ...
Plastic Relaxation In Single InᵡGa₁âᵡN/GaN Epilayers Grown On Sapphire
Plastic relaxation was observed in InᵡGa₁âᵡN/GaN epilayers grown on c-plane sapphire substrates. The relaxation obeys the universal hyperbolic relation between the strain and the reciprocal of the layer ...
High hole and electron mobilities using Strained Si/Strained Ge heterostructures
PMOS and NMOS mobility characteristics of the dual channel (strained Si/strained Ge) heterostructure have been reviewed. It is shown that the dual channel heterostructure can provide substantially enhanced mobilities for ...