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Native Point Defects in yttria as a High-Dielectric-Constant Gate Oxide Material: A First-Principles Study
(2006-01)
Yttria (Y₂O₃) has become a
promising gate oxide material to replace silicon dioxide in metal-oxide-semiconductor (MOS) devices. The characterization of native point defect in Y₂O₃ is essential to understand the behavior ...
Characterization of LiNi₀.₅Mn₁.₅O₄ Thin Film Cathode Prepared by Pulsed Laser Deposition
(2006-01)
LiNi₀.₅Mn₁.₅O₄ thin films have been grown by pulsed laser deposition (PLD) on stainless steel (SS) substrates. The crystallinity and structure of thin films were investigated by X-ray diffraction (XRD). Microstructure and ...
Amorphous Al-transition Metal Alloys as Anode Material for Lithium Ion Battery
(2006-01)
Al based alloy powders (Al₈₅Ni₅Y₆Co₂Fe₂) are produced by spray atomization method. High energy ball milling is done to modify the surface topology and particle size for better electrochemical performance. X ray diffraction ...