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Graded InGaN Buffers for Strain Relaxation in GaN/InGaN Epliayers Grown on Sapphire
(2002-01)
Graded InGaN buffers are employed to relax the strain arising from the lattice and thermal mismatches between GaN/InGaN epilayers grown on sapphire. The formation of V-pits in linearly graded InGaN/GaN bulk epilayers is ...
Graded InGaN Buffers for Strain Relaxation in GaN/InGaN Epilayers Grown on sapphire
(2003-01)
Graded InGaN buffers were employed to relax the strain arising from the lattice and thermal mismatch in GaN/InGaN epilayers grown on sapphire. An enhanced strain relaxation was observed in GaN grown on a stack of five InGaN ...
High Indium Concentration InGaN/GaN Grown on Sapphire Substrate by MOCVD
(2005-01)
The InGaN system provides the opportunity to fabricate light emitting devices over the whole visible and ultraviolet spectrum due to band-gap energies E[subscript g] varying between 3.42 eV for GaN and 1.89 eV for InN. ...