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Fabrication and I-V Characterization of ZnO Nanorod Based Metal-Insulator-Semiconductor Junction
(2006-01)
We report on the characteristics of a ZnO based metal insulator semiconductor (MIS) diode comprised of a heterostructure of n-ZnO nanorods/n-GaN. The MIS structure consisted of unintentional - doped n type ZnO nanorods ...
Enhancement in Indium Incorporation for InGaN Grown on InN Intermediate Layer
(2006-01)
InN has been grown on GaN with a thin intermediate layer of InGaN by metalorganic chemical vapor deposition (MOCVD) to further enhance indium incorporation in subsequent InGaN layer. Trimethylindium (TMI) and ammonia (NH₃) ...
Fabrication of Two-Dimensional Photonic Crystals in AlGaInP/GaInP Membranes by Inductively Coupled Plasma Etching
(2006-01)
The fabrication process of two-dimensional photonic crystals in an AlGaInP/GaInP multi-quantum-well membrane structure is developed. The process includes high resolution electron-beam lithography, pattern transfer into ...