Now showing items 1-6 of 6

    • A Constitutive Model for the Mechanical Behavior of Single Crystal Silicon at Elevated Temperature 

      Moon, H.-S.; Anand, Lallit; Spearing, S. Mark (2002-01)
      Silicon in single crystal form has been the material of choice for the first demonstration of the MIT microengine project. However, because it has a relatively low melting temperature, silicon is not an ideal material for ...
    • Effect of Wafer Bow and Etch Patterns in Direct Wafer Bonding 

      Spearing, S. Mark; Turner, K.T. (2003-01)
      Direct wafer bonding has been identified as an en-abling technology for microelectromechanical systems (MEMS). As the complexity of devices increase and the bonding of multiple patterned wafers is required, there is a need ...
    • Gold Thermocompression Wafer Bonding 

      Spearing, S. Mark; Tsau, Christine H.; Schmidt, Martin A. (2004-01)
      Thermocompression bonding of gold is a promising technique for the fabrication and packaging microelectronic and MEMS devices. The use of a gold interlayer and moderate temperatures and pressures results in a hermetic, ...
    • MEMS Materials and Processes: a research overview 

      Spearing, S. Mark (2003-01)
      An overview is provided of materials and processes research currently being conducted in support of MEMS device design at MIT. Underpinning research is being conducted in five areas: room temperature strength characterization, ...
    • Process development of silicon-silicon carbide hybrid structures for micro-engines (January 2002) 

      Choi, D.; Shinavski, R.J.; Spearing, S. Mark (2002-01)
      MEMS-based gas turbine engines are currently under development at MIT for use as a button-sized portable power generator or micro-aircraft propulsion sources. Power densities expected for the micro-engines require very ...
    • Wafer-Level Thermocompression Bonds 

      Tsau, Christine H.; Schmidt, Martin A.; Spearing, S. Mark (2003-01)
      Thermocompression bonding of gold is a promising technique for achieving low temperature, wafer-level bonding without the application of an electric field or complicated pre-bond cleaning procedure. The presence of a ductile ...