Browsing Advanced Materials for Micro- and Nano-Systems (AMMNS) by Author "Maxisch, T."
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Native Point Defects in yttria as a High-Dielectric-Constant Gate Oxide Material: A First-Principles Study
Zheng, J.X.; Ceder, Gerbrand; Maxisch, T.; Chim, Wai Kin; Choi, Wee Kiong (2006-01)Yttria (Y₂O₃) has become a promising gate oxide material to replace silicon dioxide in metal-oxide-semiconductor (MOS) devices. The characterization of native point defect in Y₂O₃ is essential to understand the behavior ...