Browsing Advanced Materials for Micro- and Nano-Systems (AMMNS) by Subject "SiGe"
Now showing items 1-6 of 6
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High hole and electron mobilities using Strained Si/Strained Ge heterostructures
(2004-01)PMOS and NMOS mobility characteristics of the dual channel (strained Si/strained Ge) heterostructure have been reviewed. It is shown that the dual channel heterostructure can provide substantially enhanced mobilities for ... -
MOSFET Channel Engineering using Strained Si, SiGe, and Ge Channels
(2003-01)Biaxial tensile strained Si grown on SiGe virtual substrates will be incorporated into future generations of CMOS technology due to the lack of performance increase with scaling. Compressively strained Ge-rich alloys with ... -
Si Industry at a Crossroads: New Materials or New Factories?
(2002-01)Many trends in the silicon industry could be interpreted as the herald of the end of traditional Si scaling. If this premise holds, future performance and system-on-chip applications may not be reached with conventional ... -
SiGe-On-Insulator (SGOI) Technology and MOSFET Fabrication
(2002-01)In this work, we have developed two different fabrication processes for relaxed Si₁₋xGex-on-insulator (SGOI) substrates: (1) SGOI fabrication by etch-back approach, and (2) by "smart-cut" approach utilizing ... -
SiGe-On-Insulator (SGOI): Two Structures for CMOS Application
(2003-01)Two SiGe-on-insulator (SGOI) structures for CMOS application are presented: surface-channel strained-Si on SGOI (SSOI) and dual-channel SGOI structures. Comparisons between two structures are made from both device performance ... -
Strained Ge channel p-type metal-oxide-semiconductor field-effect transistors grown on Siâ‚â‚‹xGex/Si virtual substrates
(2002-01)We have fabricated strained Ge channel p-type metal-oxide-semiconductor field-effect transistors (p-MOSFETs) on Si₀.₃Ge₀.₇ virtual substrates. The poor interface between silicon dioxide (SiO₂) and the Ge channel ...
