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    • GaN Nanopore Arrays: Fabrication and Characterization 

      Wang, Yadong; Peng, Chen; Sander, Melissa; Chua, Soo-Jin; Fonstad, Clifton G. Jr. (2004-01)
      GaN nanopore arrays with pore diameters of approximately 75 nm were fabricated by inductively coupled plasma etching (ICP) using anodic aluminum oxide (AAO) films as etch masks. Nanoporous AAO films were formed on the GaN ...