Browsing Advanced Materials for Micro- and Nano-Systems (AMMNS) by Subject "bonding"
Now showing items 1-3 of 3
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Preliminary Characterisation of Low-Temperature Bonded Copper Interconnects for 3-D Integrated Circuits
(2005-01)Three dimensional (3-D) integrated circuits can be fabricated by bonding previously processed device layers using metal-metal bonds that also serve as layer-to-layer interconnects. Bonded copper interconnects test structures ... -
SiGe-On-Insulator (SGOI) Technology and MOSFET Fabrication
(2002-01)In this work, we have developed two different fabrication processes for relaxed Si₁₋xGex-on-insulator (SGOI) substrates: (1) SGOI fabrication by etch-back approach, and (2) by "smart-cut" approach utilizing ... -
SiGe-On-Insulator (SGOI): Two Structures for CMOS Application
(2003-01)Two SiGe-on-insulator (SGOI) structures for CMOS application are presented: surface-channel strained-Si on SGOI (SSOI) and dual-channel SGOI structures. Comparisons between two structures are made from both device performance ...