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    • MOSFET Channel Engineering using Strained Si, SiGe, and Ge Channels 

      Fitzgerald, Eugene A.; Lee, Minjoo L.; Leitz, Christopher W.; Antoniadis, Dimitri A. (2003-01)
      Biaxial tensile strained Si grown on SiGe virtual substrates will be incorporated into future generations of CMOS technology due to the lack of performance increase with scaling. Compressively strained Ge-rich alloys with ...