Now showing items 1-2 of 2
Progress in Developing and Extending RM³ Heterogeneous Integration Technologies
This paper describes recent progress in a continuing program to develop and apply RM³ (recess mounting with monolithic metallization) technologies for heterogeneous integration. Particular emphasis is placed on the APB ...
GaN Based Nanomaterials Fabrication with Anodic Aluminium Oxide by MOCVD
A highly self-ordered hexagonal array of cylindrical pores has been fabricated by anodizing a thin film of Al on substrate and subsequent growth of GaN and InGaN in these nanoholes has been performed. This AAO template-based ...