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Fatal Void Size Comparisons in Via-Below and Via-Above Cu Dual-Damascene Interconnects

Choi, Z.-S.; Gan, C.L.; Wei, F.; Thompson, Carl V.; Lee, J.H.; e.a. (2004-01)

The median-times-to-failure (t₅₀’s) for straight dual-damascene via-terminated copper interconnect structures, tested under the same conditions, depend on whether the vias connect down to underlaying leads ...

Observation of Joule Heating-Assisted Electromigration Failure Mechanisms for Dual Damascene Cu/SiO₂ Interconnects

Chang, Choon Wai; Gan, C.L.; Thompson, Carl V.; Pey, Kin Leong; Choi, Wee Kiong (2003-01)

Failure mechanisms observed in electromigration (EM) stressed dual damascene Cu/SiO₂ interconnects trees were studied and simulated. Failure sites with â€˜melt patch’ or â€˜crater’ are common for test structures in the top ...

Reliability of Multi-Terminal Copper Dual-Damascene Interconnect Trees

Gan, C.L.; Thompson, Carl V.; Pey, Kin Leong; Choi, Wee Kiong (2003-01)

Electromigration tests on different Cu dual-damascene interconnect tree structures consisting of various numbers of straight via-to-via lines connected at the common middle terminal have been carried out. Like Al-based ...

Investigation of the Fundamental Reliability Unit for Cu Dual-Damascene Metallization

Gan, C.L.; Thompson, Carl V.; Pey, Kin Leong; Choi, Wee Kiong; Wei, F.; e.a. (2002-01)

An investigation has been carried out to determine the fundamental reliability unit of copper dual-damascene metallization. Electromigration experiments have been carried out on straight via-to-via interconnects in the ...

Mortality Dependence of Cu Dual Damascene Interconnects on Adjacent Segments

Chang, Choon Wai; Gan, C.L.; Thompson, Carl V.; Pey, Kin Leong; Choi, Wee Kiong; e.a. (2004-01)

Electromigration experiments have been carried out on straight interconnects that have single vias at each end, and are divided into two segments by a via in the center ("dotted-I" structures). For dotted-i structures in ...