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In this study, the native point defects including oxygen vacancy and interstitial, metal (La, Al) vacancy and interstitial, and metal antisite in perovskite LAO are studied. Defect formation energies are studied as a ...

The ZnO nanorods with the length of 1-1.5 μm were deposited on p-GaN by hydrothermal synthesis at low temperature 100°C. The structural and optical properties of the as-grown ZnO rods were investigated by X-Ray diffraction ...

The homogeneous deformation of Zr-based bulk metallic glass composites is studied near the glass transition temperature, at various levels of reinforcement volume fraction. Through examination of the constitutive response, ...

Germanium (Ge) nanocrystals had been synthesized by annealing co-sputtered SiO₂-Ge in N₂ and/or forming gas (90% N₂ + 10% H₂) at temperatures ranging from 700 to 1000°C from 15 to 60 min. It was concluded that the annealing ...

Preferred c-axis oriented LiCoO₂ thin films were prepared on the SiO₂/Si (SOS) substrates by pulsed laser deposition (PLD). Thin film electrodes without carbon and binder are ideal samples to study the electrochemical ...

Colloidal crystals are 3D nanostructures formed by self assembly of nanoparticles in suspension. The interaction forces between the colloid particles are expected to affect the ordering and the defect density in the resultant ...

A simple and cost-effective Si-doped porous GaN is fabricated by UV-enhanced electrochemical etching. An optimum current density of 20 mA/cm² applied for an hour in dilute NaOH solution produces a high density of uniform ...

Continual scaling of the CMOS technology requires thinner gate dielectric to maintain high performance. However, when moving into the sub-45 nm CMOS generation, the traditional poly-Si gate approach cannot effectively ...