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Length Effects on the Reliability of Dual-Damascene Cu Interconnects
The effects of interconnect length on the reliability of dual-damascene Cu metallization have been investigated. As in Al-based interconnects, the lifetimes of Cu lines increase with decreasing length. However, unlike ...
Charge Storage Effect in a Trilayer Structure Comprising Germanium Nanocrystals
A metal-insulator-semiconductor (MIS) device with a trilayer insulator structure consisting of sputtered SiO₂ (~50nm)/evaporated pure germanium (Ge) layer (2.4nm)/rapid thermal oxide (~5nm) was fabricated on a p-type ...
Investigation of the Fundamental Reliability Unit for Cu Dual-Damascene Metallization
An investigation has been carried out to determine the fundamental reliability unit of copper dual-damascene metallization. Electromigration experiments have been carried out on straight via-to-via interconnects in the ...
Synthesis of Germanium Nanocrystals and its Possible Application in Memory Devices
A novel method of synthesizing and controlling the size of germanium nanocrystals was developed. A tri-layer structure comprising of a thin (~5nm) SiO₂ layer grown using rapid thermal oxidation (RTO), followed by a ...