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Charge Storage Mechanism and Size Control of Germanium Nanocrystals in a Tri-layer Insulator Structure of a MIS Memory Device 

Teo, L.W.; Ho, Van Tai; Tay, M.S.; Lei, Y.; Choi, Wee Kiong; e.a. (2003-01)
A method of synthesizing and controlling the size of germanium nanocrystals is developed. A tri-layer metal-insulator-semiconductor (MIS) memory device structure comprising of a thin (~5nm) silicon dioxide (SiO₂) ...
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Dependence of nanocrystal formation and charge storage/retention performance of a tri-layer memory structure on germanium concentration and tunnel oxide thickness 

Teo, L.W.; Ho, Van Tai; Tay, M.S.; Choi, Wee Kiong; Chim, Wai Kin; e.a. (2004-01)
The effect of germanium (Ge) concentration and the rapid thermal oxide (RTO) layer thickness on the nanocrystal formation and charge storage/retention capability of a trilayer metal-insulator-semiconductor device was ...

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AuthorAntoniadis, Dimitri A. (2)Chim, Wai Kin (2)
Choi, Wee Kiong (2)
Fitzgerald, Eugene A. (2)Ho, Van Tai (2)Tay, M.S. (2)Teo, L.W. (2)Lei, Y. (1)Subjectfloating gate (2)Ge nanocrystal (2)
metal-insulator-semiconductor (2)
... View MoreDate Issued2003 (1)2004 (1)Has File(s)Yes (2)

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