Now showing items 1-3 of 3
Effects of Platinum on NiPtSiGe/n-SiGe and NiPtSi/n-Si Schottky Contacts
Solid phase reaction of NiPt/Si and NiPt/SiGe is one of the key issues for silicide (germanosilicide) technology. Especially, the NiPtSiGe, in which four elements are involved, is a very complex system. As a result, a ...
Nanocrystalline Ge Flash Memories: Electrical Characterization and Trap Engineering
Conventional floating gate non-volatile memories (NVMs) present critical issues for device scalability beyond the sub-90 nm node, such as gate length and tunnel oxide thickness reduction. Nanocrystalline germanium (nc-Ge) ...
Poly-Si₁âxGex Film Growth for Ni Germanosilicided Metal Gate
Scaling down of the CMOS technology requires thinner gate dielectric to maintain high performance. However, due to the depletion of poly-Si gate, it is difficult to reduce the gate thickness further especially for sub-65 ...