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The Effect of Periodic Silane Burst on the Properties of GaN on Si (111) Substrates
The periodic silane burst technique was employed during metalorganic chemical vapor deposition of epitaxial GaN on AlN buffer layers grown on Si (111). Periodic silicon delta doping during growth of both the AlN and GaN ...
Structural analysis of metalorganic chemical vapor deposited AlN nucleation layers on Si (111)
AlN nucleation layers are being investigated for growth of GaN on Si. The microstructures of high-temperature AlN nucleation layers grown by MOCVD on Si (111) substrates with trimethylaluminium pre-treatments have been ...