Search
Now showing items 1-2 of 2
The interfacial reaction of Ni on (100) Si₁âxGex (x=0, 0.25) and (111) Ge
(2003-01)
The interfacial reaction of Ni with Si, Si₀.₇₅Ge₀.₂₅, and Ge at 400°C has been investigated. A uniform epitaxial NiSi film was obtained at 400°C for Ni-Silicidation on Si using rapid thermal annealing method. Similarly, ...
SiGe-On-Insulator (SGOI): Two Structures for CMOS Application
(2003-01)
Two SiGe-on-insulator (SGOI) structures for CMOS application are presented: surface-channel strained-Si on SGOI (SSOI) and dual-channel SGOI structures. Comparisons between two structures are made from both device performance ...