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Structural analysis of metalorganic chemical vapor deposited AlN nucleation layers on Si (111)
(2004-01)
AlN nucleation layers are being investigated for growth of GaN on Si. The microstructures of high-temperature AlN nucleation layers grown by MOCVD on Si (111) substrates with trimethylaluminium pre-treatments have been ...
Evolution of AlN buffer layers on Silicon and the effect on the property of the expitaxial GaN film
(2003-01)
The morphology evolution of high-temperature grown AlN nucleation layers on (111) silicon has been studied using atomic force microscopy (AFM). The structure and morphology of subsequently grown GaN film were characterized ...