Now showing items 1-2 of 2
Graded InGaN Buffers for Strain Relaxation in GaN/InGaN Epilayers Grown on sapphire
Graded InGaN buffers were employed to relax the strain arising from the lattice and thermal mismatch in GaN/InGaN epilayers grown on sapphire. An enhanced strain relaxation was observed in GaN grown on a stack of five InGaN ...
Laser Fabrication by Using Photonic Crystal
This paper involves the calculation for composition of different layer used in laser structure and the simulation of cavity, formed by creating air columns in the InGaAsP medium, for square lattice. The aim of this project ...