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Micro Raman Spectroscopy of Annealed Erbium Implanted GaN
(2004-01)
Wurtzite GaN epilayers grown by metal organic chemical vapor deposition on sapphire substrates were subsequently ion implanted with Er to a dose of 5×10¹⁵ cm⁻². The implanted samples were annealed in nitrogen atmosphere ...
Plastic Relaxation In Single InᵡGa₁âᵡN/GaN Epilayers Grown On Sapphire
(2004-01)
Plastic relaxation was observed in InᵡGa₁âᵡN/GaN epilayers grown on c-plane sapphire substrates. The relaxation obeys the universal hyperbolic relation between the strain and the reciprocal of the layer ...