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Plastic Relaxation In Single InᵡGa₁âᵡN/GaN Epilayers Grown On Sapphire
(2004-01)
Plastic relaxation was observed in InᵡGa₁âᵡN/GaN epilayers grown on c-plane sapphire substrates. The relaxation obeys the universal hyperbolic relation between the strain and the reciprocal of the layer ...