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Evolution of AlN buffer layers on Silicon and the effect on the property of the expitaxial GaN film
The morphology evolution of high-temperature grown AlN nucleation layers on (111) silicon has been studied using atomic force microscopy (AFM). The structure and morphology of subsequently grown GaN film were characterized ...
Structural analysis of metalorganic chemical vapor deposited AlN nucleation layers on Si (111)
AlN nucleation layers are being investigated for growth of GaN on Si. The microstructures of high-temperature AlN nucleation layers grown by MOCVD on Si (111) substrates with trimethylaluminium pre-treatments have been ...