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Graded InGaN Buffers for Strain Relaxation in GaN/InGaN Epilayers Grown on sapphire
(2003-01)
Graded InGaN buffers were employed to relax the strain arising from the lattice and thermal mismatch in GaN/InGaN epilayers grown on sapphire. An enhanced strain relaxation was observed in GaN grown on a stack of five InGaN ...